ar c hive inf o rmati o n archive information 1 tpv8100b motorola rf device data the rf line the tpv8100b is designed for output stages in band iv and v tv transmitter amplifiers. it incorporates high value emitter ballast resistors, gold metalliza- tions and offers a high degree of reliability and ruggedness. including double input and output matching networks, the tpv8100b features high impedances. it can easily operate in a full 470 mhz to 860 mhz bandwidth in a single and simple circuit. ? to be used class ab for tv band iv and v. ? specified 28 volts, 860 mhz characteristics output power = 125 watts (peak sync.) output power = 100 watts (cw) minimum gain = 8.5 db ? specified 32 volts, 860 mhz characteristics output power = 150 watts (peak sync.) ? circuit board photomaster available upon request by contacting rf tactical marketing in phoenix, az. maximum ratings rating symbol value unit collectorCemitter voltage v cer 40 vdc collectorCbase voltage v cbo 65 vdc emitterCbase voltage v ebo 4 vdc collectorCcurrent continuous i c 12 adc total device dissipation @ 25 c case derate above 25 c p d 215 1.25 watts w/ c operating junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case (1) r jc 0.8 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 10 ma, r be = 75 ? ) v (br)cer 30 vdc collectorCemitter breakdown voltage (i c = 10 madc) v (br)ebo 4 vdc collectorCbase breakdown voltage (i e = 20 madc) v (br)cbo 65 vdc collectorCemitter leakage (v ce = 28 v, r be = 75 ? ) i cer 10 ma note: (continued) 1. thermal resistance is determined under specified rf operating condition. order this document by tpv8100b/d semiconductor technical data 150 w, 470C860 mhz npn silicon rf power transistor case 398C03, style 1 ? motorola, inc. 1994 rev 6
ar c hive inf o rmati o n archive information figure 1. series equivalent input/output impedances input and output impedances with circuit tuned for maximum linearity @ v cc = 28 v / i cq = 2 x 50 ma / p out = 100 w ? tpv8100b 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics dc current gain (i c = 2 adc, v ce = 10 vdc) h fe 30 120 dynamic characteristics output capacitance (each side) (2) (v cb = 28 v, i e = 0, f = 1 mhz) c ob 44 pf functional tests in cw (sound) commonCemitter amplifier power gain (v cc = 28 v, p out = 100 w, i cq = 2 x 50 ma, f = 860 mhz) g p 8.5 9.5 db collector efficiency (v cc = 28 v, p out = 100 w, i q = 2 x 50 ma, f = 860 mhz) 55 58 % output power @ 1 db compression (p ref = 25 w) (v cc = 28 v, i cq = 2 x 50 ma, f = 860 mhz) p out 100 110 w functional tests in video (standard black level) peak output power (synch.) (v cc = 28 v, i cq = 2 x 50 ma, f = 860 mhz) p out 125 135 w peak output power (synch.) (v cc = 32 v, i cq = 2 x 25 ma, f = 860 mhz) p out 150 160 w recommended quiescent current i cq 2 x 0.3 a note: 2. value of c ob is that of die only. it is not measurable in tpv8100b because of internal matching network. f (mhz) z in (ohms) z ol * (ohms) 470 1.95 + j3.67 10.0 + j9.50 665 3.65 + j6.82 9.23 + j1.30 860 6.66 + j13.8 4.45 + j5.22 z ol * = conjugate of optimum load impedance into which z ol * = the device operates at a given output power, z ol * = voltage, current and frequency. note: z in & z ol * are given from baseCtoCbase and note: collectorCtoCcollector respectively.
ar c hive inf o rmati o n archive information 3 tpv8100b motorola rf device data ? ? c1, c9 chip capacitor 15 nf c2, c10 chip capacitor 100 nf c3, c11 chip capacitor 100 f/40 v c4 chip capacitor 15 pf atc 100a c5 chip capacitor 5.6 pf atc 100a c6 trimmer capacitor 1C4 pf c7 chip capacitor 12 pf atc 100b c8 chip capacitor 15 pf atc 100a c12 chip capacitor 12 pf atc 100a l1, l3 coaxial wire 25 ? /85 mils/40 mm l2, l4 printed board inductance r1, r2 chip resistor 1 ? 0805 5% figure 2. test circuit figure 3. power gain versus frequency figure 4. collector efficiency versus frequency typical characteristics cw wideband
ar c hive inf o rmati o n archive information tpv8100b 4 motorola rf device data test conditions: diff. gain, 10 steps channel 61 v ce = 28 v typical video characteristics @ f = 800 mhz v ce = 28 v figure 5. peak output power versus peak input power figure 6. peak output power versus peak input power figure 7. gain versus output power
ar c hive inf o rmati o n archive information 5 tpv8100b motorola rf device data test conditions: diff. gain, 10 steps channel 61 v ce = 32 v i cq = 2 x 25 ma v ce = 32 v, i cq = 2 x 25 ma p out gain 25 w 50 w 100 w 120 w 130 w 140 w 150 w 160 w 10.6 db 11.1 db 11.3 db 11.1 db 11.0 db 10.7 db 10.5 db 10.2 db (see curve on left) typical video characteristics @ f = 800 mhz v ce = 32 v figure 8. peak output power versus peak input power figure 9. differential gain
tpv8100b 6 motorola rf device data figure 10. components view package dimensions case 398C03 issue c CaC u k n g d e j h c
q CbC CtC
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